TPH3208LDG
TPH3208LDG
Part Number TPH3208LDG Description GANFET N-CH 650V 20A PQFN Package / Case 3-PowerDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 20A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)
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TPH3208LDG - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH3208L Series Standard Package 60 Manufacturer Transphorm Series - Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 13A, 8V Vgs(th) (Max) @ Id 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V Vgs (Max) ±18V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V FET Feature - Power Dissipation (Max) 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-PQFN (8x8) Package / Case 3-PowerDFN
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