TPN2010FNH,L1Q
TPN2010FNH,L1Q
Part Number TPN2010FNH,L1Q Description MOSFET N-CH 250V 5.6A 8TSON Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 250V 5.6A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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TPN2010FNH,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN2010FNH Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 198mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 100V FET Feature - Power Dissipation (Max) 700mW (Ta), 39W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSON Advance (3.3x3.3) Package / Case 8-PowerVDFN
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