TPN2R304PL,L1Q


TPN2R304PL,L1Q

Part NumberTPN2R304PL,L1Q

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPN2R304PL,L1Q - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package5000
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIX-H
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.4V @ 0.3mA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 20V
FET Feature-
Power Dissipation (Max)630mW (Ta), 104W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN

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TPN2R304PL,L1Q - Tags

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