TPN2R304PL,L1Q
TPN2R304PL,L1Q
Part Number TPN2R304PL,L1Q
Description MOSFET N-CH 40V 80A TSON
Package / Case 8-PowerVDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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TPN2R304PL,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN2R304PL
Standard Package 5000
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.4V @ 0.3mA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 20V
FET Feature -
Power Dissipation (Max) 630mW (Ta), 104W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
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