Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN4R712MD,L1Q

TPN4R712MD,L1Q

TPN4R712MD,L1Q

Part NumberTPN4R712MD,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 20V 36A 8TSON ADV

DatasheetTPN4R712MD

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN4R712MD,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R712MD,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R712MD,L1Q.
We are offering TPN4R712MD,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN4R712MD,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R712MD
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 10V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN4R712MD,L1Q - Related Products

	MTM761100LBF	Panasonic Electronic Components, P-Channel 12V 4A (Ta) 700mW (Ta) Surface Mount WSMini6-F1-B,	View
	PMXB65UPEZ	Nexperia USA Inc., P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3,	View
	SI2333CDS-T1-E3	Vishay Siliconix, P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	AO4441	Alpha & Omega Semiconductor Inc., P-Channel 60V 4A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	FDN304P	ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	NVD5117PLT4G-VF01	ON Semiconductor, P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK,	View
	SQ3425EV-T1_GE3	Vishay Siliconix, P-Channel 20V 7.4A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	NTHS5443T1G	ON Semiconductor, P-Channel 20V 3.6A (Ta) 1.3W (Ta) Surface Mount ChipFET™,	View
	DMPH6050SK3Q-13	Diodes Incorporated, P-Channel 60V 7.2A (Ta), 23.6A (Tc) 1.9W (Ta) Surface Mount TO-252,	View
	RD3P130SPTL1	Rohm Semiconductor, P-Channel 100V 13A (Ta) 20W (Tc) Surface Mount TO-252,	View
	FQT3P20TF	ON Semiconductor, P-Channel 200V 670mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4, QFET®	View
	SI4431CDY-T1-GE3	Vishay Siliconix, P-Channel 30V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SO, TrenchFET®	View

TPN4R712MD,L1Q - Tags

TPN4R712MD,L1Q TPN4R712MD,L1Q PDF TPN4R712MD,L1Q datasheet TPN4R712MD,L1Q specification TPN4R712MD,L1Q image TPN4R712MD,L1Q India Renesas Electronics India TPN4R712MD,L1Q buy TPN4R712MD,L1Q TPN4R712MD,L1Q price TPN4R712MD,L1Q distributor TPN4R712MD,L1Q supplier TPN4R712MD,L1Q wholesales