Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPW1R306PL,L1Q

TPW1R306PL,L1Q

TPW1R306PL,L1Q

Part NumberTPW1R306PL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTPW1R306PL Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

To learn about the specification of TPW1R306PL,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPW1R306PL,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPW1R306PL,L1Q.
We are offering TPW1R306PL,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPW1R306PL,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPW1R306PL Datasheet
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8100pF @ 30V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN

TPW1R306PL,L1Q - Related Products

	STP40N65M2	STMicroelectronics, N-Channel 650V 32A (Tc) 250W (Tc) Through Hole TO-220, MDmesh™ M2	View
	AOTF12N60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 12A (Tc) 50W (Tc) Through Hole TO-220F,	View
	SI4838BDY-T1-GE3	Vishay Siliconix, N-Channel 12V 34A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	STL33N60DM2	STMicroelectronics, N-Channel 600V 21A (Tc) 150W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM2	View
	SIDR680DP-T1-GE3	Vishay Siliconix, N-Channel 80V 32.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
	IPW60R060P7XKSA1	Infineon Technologies, N-Channel 600V 48A (Tc) 164W (Tc) Through Hole PG-TO247-3, CoolMOS™ P7	View
	FDS3512	ON Semiconductor, N-Channel 80V 4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SI1032X-T1-GE3	Vishay Siliconix, N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3, TrenchFET®	View
	IXTH15N50L2	IXYS, N-Channel 500V 15A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), Linear L2™	View
	DN3545N8-G	Microchip Technology, N-Channel 450V 200mA 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	RD3T100CNTL1	Rohm Semiconductor, N-Channel 200V 10A (Tc) 85W (Tc) Surface Mount TO-252,	View
	BSC079N03LSCGATMA1	Infineon Technologies, N-Channel 30V 14A (Ta), 50A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View

TPW1R306PL,L1Q - Tags

TPW1R306PL,L1Q TPW1R306PL,L1Q PDF TPW1R306PL,L1Q datasheet TPW1R306PL,L1Q specification TPW1R306PL,L1Q image TPW1R306PL,L1Q India Renesas Electronics India TPW1R306PL,L1Q buy TPW1R306PL,L1Q TPW1R306PL,L1Q price TPW1R306PL,L1Q distributor TPW1R306PL,L1Q supplier TPW1R306PL,L1Q wholesales