Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPW1R306PL,L1Q

TPW1R306PL,L1Q

TPW1R306PL,L1Q

Part NumberTPW1R306PL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTPW1R306PL Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

To learn about the specification of TPW1R306PL,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPW1R306PL,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPW1R306PL,L1Q.
We are offering TPW1R306PL,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPW1R306PL,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPW1R306PL Datasheet
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8100pF @ 30V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN

TPW1R306PL,L1Q - Related Products

	TPW1R005PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 45V 300A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance, U-MOSIX-H	View
	TSM090N03CP ROG	Taiwan Semiconductor Corporation, N-Channel 30V 50A (Tc) 40W (Tc) Surface Mount TO-252, (D-Pak),	View
	SIHH14N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 16A (Tc) 147W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	FDD6680AS	ON Semiconductor, N-Channel 30V 55A (Ta) 60W (Ta) Surface Mount TO-252, PowerTrench®, SyncFET™	View
	NTTFS4C08NTAG	ON Semiconductor, N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	FQB19N20LTM	ON Semiconductor, N-Channel 200V 21A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	IRLR2905TRPBF	Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	RD3L080SNTL1	Rohm Semiconductor, N-Channel 60V 8A (Ta) 15W (Tc) Surface Mount TO-252,	View
	IRFZ10PBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB,	View
	IRF40B207	Infineon Technologies, N-Channel 40V 95A (Tc) 83W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	PMN55ENEX	Nexperia USA Inc., N-Channel 60V 4.5A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP, TrenchMOS™	View
	BSC026N02KSGAUMA1	Infineon Technologies, N-Channel 20V 25A (Ta), 100A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View

TPW1R306PL,L1Q - Tags

TPW1R306PL,L1Q TPW1R306PL,L1Q PDF TPW1R306PL,L1Q datasheet TPW1R306PL,L1Q specification TPW1R306PL,L1Q image TPW1R306PL,L1Q India Renesas Electronics India TPW1R306PL,L1Q buy TPW1R306PL,L1Q TPW1R306PL,L1Q price TPW1R306PL,L1Q distributor TPW1R306PL,L1Q supplier TPW1R306PL,L1Q wholesales