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TPW4R008NH,L1Q

TPW4R008NH,L1Q

Part NumberTPW4R008NH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 80V 116A 8DSOP

DatasheetTPW4R008NH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 116A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance

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TPW4R008NH,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPW4R008NH
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5300pF @ 40V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN

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