TPW4R008NH,L1Q
TPW4R008NH,L1Q
Part Number TPW4R008NH,L1Q
Description MOSFET N-CH 80V 116A 8DSOP
Package / Case 8-PowerVDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 80V 116A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
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TPW4R008NH,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPW4R008NH
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 40V
FET Feature -
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerVDFN
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