TSM190N08CZ C0G
TSM190N08CZ C0G
Part Number TSM190N08CZ C0G
Description MOSFET N-CHANNEL 75V 190A TO220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 75V 190A (Tc) 250W (Tc) Through Hole TO-220
To learn about the specification of TSM190N08CZ C0G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TSM190N08CZ C0G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TSM190N08CZ C0G.
We are offering TSM190N08CZ C0G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
TSM190N08CZ C0G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM190N08
Standard Package 1000
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 30V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
TSM190N08CZ C0G - Related ProductsMore >>
STU6N90K5
STMicroelectronics, N-Channel 900V 6A (Tc) 110W (Tc) Through Hole IPAK (TO-251), MDmesh™ K5
View
2N7000-D75Z
ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,
View
TK31J60W,S1VQ
Toshiba Semiconductor and Storage, N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N), DTMOSIV
View
2SK3564(STA4,Q,M)
Toshiba Semiconductor and Storage, N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS, π-MOSIV
View
SI7322ADN-T1-GE3
Vishay Siliconix, N-Channel 100V 15.1A (Tc) 26W (Tc) Surface Mount PowerPAK® 1212-8, ThunderFET®
View
IPD90R1K2C3ATMA1
Infineon Technologies, N-Channel 900V 5.1A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
CSD18513Q5A
Texas Instruments, N-Channel 40V 124A (Tc) 96W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
View
IRF520NSTRLPBF
Infineon Technologies, N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK, HEXFET®
View
SI7812DN-T1-GE3
Vishay Siliconix, N-Channel 75V 16A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IRFR024NTRLPBF
Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
View
IXFX180N25T
IXYS, N-Channel 250V 180A (Tc) 1390W (Tc) Through Hole PLUS247™-3, GigaMOS™
View
IRLIZ34GPBF
Vishay Siliconix, N-Channel 60V 20A (Tc) 42W (Tc) Through Hole TO-220-3,
View
TSM190N08CZ C0G - Tags