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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet TSM2537CQ
Standard Package 1
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 11.6A (Tc), 9A (Tc)
Rds On (Max) @ Id, Vgs 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 677pF @ 10V, 744pF @ 10V
Power - Max 6.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Supplier Device Package 6-TDFN (2x2)
SH8M13GZETB
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Diodes Incorporated, Mosfet Array N and P-Channel 30V 650mA, 450mA 310mW Surface Mount SOT-363,
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US6M2TR
Rohm Semiconductor, Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6,
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DMC3028LSDXQ-13
Diodes Incorporated, Mosfet Array N and P-Channel 30V 5.5A, 5.8A 1.2W Surface Mount 8-SO,
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