TSM60NB041PW C1G
TSM60NB041PW C1G
Part Number TSM60NB041PW C1G Description MOSFET N-CHANNEL 600V 78A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 78A (Tc) 446W (Tc) Through Hole TO-247
To learn about the specification of TSM60NB041PW C1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TSM60NB041PW C1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TSM60NB041PW C1G.
We are offering TSM60NB041PW C1G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
TSM60NB041PW C1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM60NB041PW Standard Package 500 Manufacturer Taiwan Semiconductor Corporation Series - Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 78A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 41mOhm @ 21.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6120pF @ 100V FET Feature - Power Dissipation (Max) 446W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
TSM60NB041PW C1G - Related ProductsMore >>
FCH041N60E ON Semiconductor, N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3, SuperFET® II
View
SIHU2N80E-GE3 Vishay Siliconix, N-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251),
View
STB160N75F3 STMicroelectronics, N-Channel 75V 120A (Tc) 330W (Tc) Surface Mount D2PAK, STripFET™
View
AUIRFB8405 Infineon Technologies, N-Channel 40V 120A (Tc) 163W (Tc) Through Hole TO-220AB, HEXFET®
View
STF2HNK60Z STMicroelectronics, N-Channel 600V 2A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH™
View
SSM6K202FE,LF Toshiba Semiconductor and Storage, N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6),
View
IXTP36N30P IXYS, N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-220AB, PolarHT™
View
STH110N10F7-2 STMicroelectronics, N-Channel 100V 110A (Tc) 150W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII
View
IRFR48ZTRLPBF Infineon Technologies, N-Channel 55V 42A (Tc) 91W (Tc) Surface Mount D-PAK (TO-252AA), HEXFET®
View
RCJ120N25TL Rohm Semiconductor, N-Channel 250V 12A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83),
View
CSD17382F4T Texas Instruments, N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IRFP4110PBF Infineon Technologies, N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-247AC, HEXFET®
View
TSM60NB041PW C1G - Tags
English
