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SIHU2N80E-GE3


SIHU2N80E-GE3

Part NumberSIHU2N80E-GE3

Manufacturer

Description

Datasheet

Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIHU2N80E-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesE
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds315pF @ 100V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

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SIHU2N80E-GE3 - Tags

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