TSM60NB099PW C1G
TSM60NB099PW C1G
Part Number TSM60NB099PW C1G Description MOSFET N-CHANNEL 600V 38A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 38A (Tc) 329W (Tc) Through Hole TO-247
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TSM60NB099PW C1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM60NB099PW Standard Package 900 Manufacturer Taiwan Semiconductor Corporation Series - Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 11.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2587pF @ 100V FET Feature - Power Dissipation (Max) 329W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
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