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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM60NB190CI, TSM60NB190CZ
Standard Package 1000
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V
FET Feature -
Power Dissipation (Max) 33.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab
PSMN034-100PS,127
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ON Semiconductor, N-Channel 30V 4.5A (Ta) 640mW (Ta) Surface Mount 6-UDFN (1.6x1.6), µCool™
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STMicroelectronics, N-Channel 800V 4A (Ta) 20W (Tc) Through Hole TO-220FP, MDmesh™
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ON Semiconductor, N-Channel 200V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3, QFET®
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Toshiba Semiconductor and Storage, N-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, FDmesh™ II
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Texas Instruments, N-Channel 30V 3.1A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™
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Nexperia USA Inc., N-Channel 30V 350mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™
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