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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM60NB190CI, TSM60NB190CZ Standard Package 1000 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V FET Feature - Power Dissipation (Max) 33.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ITO-220AB Package / Case TO-220-3 Full Pack, Isolated Tab
FQP33N10 ON Semiconductor, N-Channel 100V 33A (Tc) 127W (Tc) Through Hole TO-220-3, QFET®
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DMN2230U-7 Diodes Incorporated, N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23-3,
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DMG301NU-13 Diodes Incorporated, N-Channel 25V 260mA (Ta) 320mW (Ta) Surface Mount SOT-23,
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TPH7R006PL,L1Q Toshiba Semiconductor and Storage, N-Channel 60V 60A (Tc) 81W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
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DMTH6005LPS-13 Diodes Incorporated, N-Channel 60V 20.6A (Ta), 100A (Tc) 3.2W (Ta), 150W (Tc) Surface Mount PowerDI5060-8,
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IXTX400N15X4 IXYS, N-Channel 150V 400A (Tc) 1500W (Tc) Through Hole PLUS247™,
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SQD50N04-5M6L_GE3 Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®
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BUK7Y4R8-60EX Nexperia USA Inc., N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
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FCH070N60E ON Semiconductor, N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-247 Long Leads, SuperFET® II
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IRL60B216 Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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IRF740STRRPBF Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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TK32A12N1,S4X Toshiba Semiconductor and Storage, N-Channel 120V 32A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
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