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VP2110K1-G

VP2110K1-G

Part NumberVP2110K1-G

ManufacturerMicrochip Technology

DescriptionMOSFET P-CH 100V 0.12A SOT23-3

DatasheetVP2110

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

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VP2110K1-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	VP2110
Standard Package	1
Manufacturer	Microchip Technology
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	12Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 25V
FET Feature	-
Power Dissipation (Max)	360mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB (SOT23)
Package / Case	TO-236-3, SC-59, SOT-23-3

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