VP2206N3-G
VP2206N3-G
Part Number VP2206N3-G Description MOSFET P-CH 60V 640MA TO92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3
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VP2206N3-G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet VP2206 Standard Package 1000 Manufacturer Microchip Technology Series - Packaging Bulk Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 640mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 900mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 10mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V FET Feature - Power Dissipation (Max) 740mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)
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