VP2206N3-G
VP2206N3-G
Part Number VP2206N3-G
Description MOSFET P-CH 60V 640MA TO92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3
To learn about the specification of VP2206N3-G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add VP2206N3-G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of VP2206N3-G.
We are offering VP2206N3-G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
VP2206N3-G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet VP2206
Standard Package 1000
Manufacturer Microchip Technology
Series -
Packaging Bulk
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 640mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 10mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
FET Feature -
Power Dissipation (Max) 740mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
VP2206N3-G - Related ProductsMore >>
IRLHS2242TRPBF
Infineon Technologies, P-Channel 20V 7.2A (Ta), 15A (Tc) 2.1W (Ta), 9.6W (Tc) Surface Mount 6-PQFN (2x2), HEXFET®
View
FQPF11P06
ON Semiconductor, P-Channel 60V 8.6A (Tc) 30W (Tc) Through Hole TO-220F, QFET®
View
SQJ465EP-T1_GE3
Vishay Siliconix, P-Channel 60V 8A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
RT1E040RPTR
Rohm Semiconductor, P-Channel 30V 4A (Ta) 550mW (Ta) Surface Mount 8-TSST,
View
TSM3443CX6 RFG
Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Ta) 2W (Ta) Surface Mount SOT-26,
View
IRFI9634GPBF
Vishay Siliconix, P-Channel 250V 4.1A (Tc) 35W (Tc) Through Hole TO-220-3,
View
SSM3J143TU,LF
Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
SI1021R-T1-GE3
Vishay Siliconix, P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A, TrenchFET®
View
NTLJS2103PTBG
ON Semiconductor, P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2), µCool™
View
NTS4101PT1G
ON Semiconductor, P-Channel 20V 1.37A (Ta) 329mW (Ta) Surface Mount SC-70-3 (SOT323),
View
IRFR9010TRLPBF
Vishay Siliconix, P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-Pak,
View
DMP32D9UFZ-7B
Diodes Incorporated, P-Channel 30V 200mA (Ta) 390mW (Ta) Surface Mount X2-DFN0606-3,
View
VP2206N3-G - Tags