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VP2206N3-G

VP2206N3-G

Part NumberVP2206N3-G

ManufacturerMicrochip Technology

DescriptionMOSFET P-CH 60V 640MA TO92-3

DatasheetVP2206

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3

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VP2206N3-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	VP2206
Standard Package	1000
Manufacturer	Microchip Technology
Series	-
Packaging	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	640mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 10mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
FET Feature	-
Power Dissipation (Max)	740mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

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