ZVN3306A
ZVN3306A
Part Number ZVN3306A Description MOSFET N-CH 60V 270MA TO92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92-3
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ZVN3306A - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ZVN3306A Standard Package 4000 Manufacturer Diodes Incorporated Series - Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 35pF @ 18V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)
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BUK7E4R6-60E,127 Nexperia USA Inc., N-Channel 60V 100A (Tc) 234W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, TrenchMOS™
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DMN3051L-7 Diodes Incorporated, N-Channel 30V 5.8A (Ta) 700mW (Ta) Surface Mount SOT-23-3,
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RSM002N06T2L Rohm Semiconductor, N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount VMT3,
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TSM70N600ACL X0G Taiwan Semiconductor Corporation, N-Channel 700V 8A (Tc) 83W (Tc) Through Hole TO-262S (I2PAK),
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PHP79NQ08LT,127 Nexperia USA Inc., N-Channel 75V 73A (Tc) 157W (Tc) Through Hole TO-220AB, TrenchMOS™
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