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ZVP2110GTA

ZVP2110GTA

Part NumberZVP2110GTA

ManufacturerDiodes Incorporated

DescriptionMOSFET P-CH 100V 0.31A SOT223

DatasheetZVP2110G

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 310mA (Ta) 2W (Ta) Surface Mount SOT-223

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ZVP2110GTA - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	ZVP2110G
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA

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