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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet ZXTC2061E6
Standard Package 3000
Manufacturer Diodes Incorporated
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 5A, 3.5A
Voltage - Collector Emitter Breakdown (Max) 12V
Vce Saturation (Max) @ Ib, Ic 180mV @ 100mA, 5A / 200mV @ 350mA, 3.5A
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 480 @ 1A, 2V / 290 @ 1A, 2V
Power - Max 1.1W
Frequency - Transition 260MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6
Supplier Device Package SOT-26
Base Part Number Z2061
BC847BPDW1T2G
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363,
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NST847BPDP6T5G
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 350mW Surface Mount SOT-963,
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PUMZ2,125
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 100MHz, 190MHz 300mW Surface Mount 6-TSSOP,
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DME50C010R
Panasonic Electronic Components, Bipolar (BJT) Transistor Array NPN, PNP Complementary Darlington 50V 100mA 150MHz 150mW Surface Mount SMini5-F3-B,
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PBSS4140DPN,115
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 40V 1A 150MHz 600mW Surface Mount 6-TSOP,
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BC847QAPNZ
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 350mW Surface Mount DFN1010B-6, Automotive, AEC-Q101
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PUMZ1,115
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 40V 100mA 100MHz 300mW Surface Mount 6-TSSOP,
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ECH8502-TL-H
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 100V, 50V 5A 290MHz 1.6W Surface Mount 8-ECH,
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PBSS4240DPN,115
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 40V 1.35A, 1.1A 150MHz 1.1W Surface Mount 6-TSOP,
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MBT3946DW1T1G
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363,
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STA457C
Sanken, Bipolar (BJT) Transistor Array 2 NPN, 2 PNP Darlington (H-Bridge) 60V 4A 4W Through Hole 10-SIP,
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HN1B04FE-Y,LF
Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6,
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