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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet ZXTC2062E6
Standard Package 1
Manufacturer Diodes Incorporated
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 4A, 3.5A
Voltage - Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 190mV @ 200mA, 4A / 250mV @ 175mA, 3.5A
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 1A, 2V / 170 @ 1A, 2V
Power - Max 1.1W
Frequency - Transition 215MHz, 290MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6
Supplier Device Package SOT-26
Base Part Number Z2062
ZXTC2045E6TA
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ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363,
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UMZ1NT1G
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 50V 200mA 114MHz, 142MHz 250mW Surface Mount SC-88/SC70-6/SOT-363,
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