Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2N5109
Standard Package	500
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	1.2GHz
Noise Figure (dB Typ @ f)	3dB @ 200MHz
Gain	-
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 15V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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KSP10TA	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3,	View
BFU630F,115	NXP USA Inc., RF Transistor NPN 5.5V 30mA 21GHz 200mW Surface Mount 4-DFP,	View
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BFQ19SH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 120mA 5.5GHz 1W Surface Mount SOT-89-3,	View
BFR460L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 5.8V 50mA 22GHz 200mW Surface Mount PG-TSLP-3-1,	View
BFU580QX	NXP USA Inc., RF Transistor NPN 12V 60mA 10.5GHz 1W Surface Mount SOT-89-3,	View
2SC4774T106S	Rohm Semiconductor, RF Transistor NPN 6V 50mA 800MHz 200mW Surface Mount UMT3,	View
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 1.8W Surface Mount PW-MINI,	View
BFR840L3RHESDE6327XTSA1	Infineon Technologies, RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3,	View

2N5109

Part Number2N5109