2N7000-G
2N7000-G
Part Number 2N7000-G Description MOSFET N-CH 60V 0.2A TO92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 200mA (Tj) 1W (Tc) Through Hole TO-92-3
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2N7000-G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7000 Standard Package 1000 Manufacturer Microchip Technology Series - Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 1mA Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)
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