Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5084
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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MMBTH10RG	ON Semiconductor, RF Transistor NPN 40V 50mA 450MHz 225mW Surface Mount SOT-23-3,	View
BFU580QX	NXP USA Inc., RF Transistor NPN 12V 60mA 10.5GHz 1W Surface Mount SOT-89-3,	View
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BFU550XRR	NXP USA Inc., RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
MCH4009-TL-H	ON Semiconductor, RF Transistor NPN 3.5V 40mA 25GHz 120mW Surface Mount 4-MCPH,	View
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KSP10BU	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3,	View
BFU530XRR	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
SS9018HBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View

2SC5084-O(TE85L,F)

Part Number2SC5084-O(TE85L,F)