Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5085
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1dB @ 500MHz
Gain	-
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View
BFU590GX	NXP USA Inc., RF Transistor NPN 12V 200mA 8.5GHz 2W Surface Mount SOT-223,	View
BFP640H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4,	View
BFP420H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 35mA 25GHz 160mW Surface Mount SOT-343,	View
BFP740H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount SOT-343,	View
BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
BFP193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT343-4,	View
MRF448	M/A-Com Technology Solutions, RF Transistor NPN 50V 16A 250W Chassis Mount 211-11, Style 2,	View
BFU590QX	NXP USA Inc., RF Transistor NPN 12V 200mA 8GHz 2W Surface Mount SOT-89-3,	View
BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
BFG35,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-223,	View

2SC5085-O(TE85L,F)

Part Number2SC5085-O(TE85L,F)