Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5095
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.8dB @ 2GHz
Gain	13dB ~ 7.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 7mA, 6V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70

BFU580QX	NXP USA Inc., RF Transistor NPN 12V 60mA 10.5GHz 1W Surface Mount SOT-89-3,	View
BFR193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT323-3,	View
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount USM,	View
BFP640H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4,	View
BFS17WH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount PG-SOT323-3,	View
BLT81,115	NXP USA Inc., RF Transistor NPN 9.5V 500mA 900MHz 2W Surface Mount SOT-223,	View
BFU760F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 45GHz 220mW Surface Mount 4-DFP,	View
NSVF3007SG3T1G	ON Semiconductor, RF Transistor NPN 12V 30mA 8GHz 350mW Surface Mount 3-MCPH, Automotive, AEC-Q101	View
BFU580QX	NXP USA Inc., RF Transistor NPN 12V 60mA 10.5GHz 1W Surface Mount SOT-89-3,	View
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
BFP620FH7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP,	View
BFU710F,115	NXP USA Inc., RF Transistor NPN 2.8V 10mA 43GHz 136mW Surface Mount 4-DFP,	View

2SC5095-R(TE85L,F)

Part Number2SC5095-R(TE85L,F)