Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	APT30GP60BDQ1(G)
Standard Package	1
Manufacturer	Microsemi Corporation
Series	POWER MOS 7®
Packaging	Tube
Part Status	Not For New Designs
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	100A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Power - Max	463W
Switching Energy	260µJ (on), 250µJ (off)
Input Type	Standard
Gate Charge	90nC
Td (on/off) @ 25°C	13ns/55ns
Test Condition	400V, 30A, 5Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]

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STGW25H120DF2	STMicroelectronics, IGBT Trench Field Stop 1200V 50A 375W Through Hole TO-247,	View
APT30GP60BDQ1G	Microsemi Corporation, IGBT PT 600V 100A 463W Through Hole TO-247 [B], POWER MOS 7®	View
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RGT8NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S),	View
IXGT32N120A3	IXYS, IGBT PT 1200V 75A 300W Surface Mount TO-268, GenX3™	View
APT25GR120BD15	Microsemi Corporation, IGBT NPT 1200V 75A 521W Through Hole TO-247,	View
IKW75N60H3FKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 80A 428W Through Hole PG-TO247-3, TrenchStop®	View
APT50GT60BRG	Microsemi Corporation, IGBT NPT 600V 110A 446W Through Hole TO-247 [B], Thunderbolt IGBT®	View
IKW30N60H3FKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 60A 187W Through Hole PG-TO247-3, TrenchStop®	View

APT30GP60BDQ1G

Part NumberAPT30GP60BDQ1G