APT30GP60BDQ1G


APT30GP60BDQ1G

Part NumberAPT30GP60BDQ1G

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APT30GP60BDQ1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
PackagingTube
Part StatusNot For New Designs
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max463W
Switching Energy260µJ (on), 250µJ (off)
Input TypeStandard
Gate Charge90nC
Td (on/off) @ 25°C13ns/55ns
Test Condition400V, 30A, 5Ohm, 15V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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APT30GP60BDQ1G - Tags

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