Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU730F
Standard Package	1
Manufacturer	NXP USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.8V
Frequency - Transition	55GHz
Noise Figure (dB Typ @ f)	0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
Gain	-
Power - Max	197mW
DC Current Gain (hFE) (Min) @ Ic, Vce	205 @ 2mA, 2V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	4-DFP
Base Part Number	BFU730

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BFU730F,115

Part NumberBFU730F,115