BSC019N06NSATMA1
BSC019N06NSATMA1
Part Number BSC019N06NSATMA1
Description DIFFERENTIATED MOSFETS
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 100A (Ta) 136W (Ta) Surface Mount PG-TDSON-8 FL
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BSC019N06NSATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC019N06NS
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 74µA
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5.25nF @ 30V
FET Feature -
Power Dissipation (Max) 136W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8 FL
Package / Case 8-PowerTDFN
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