BSZ180P03NS3EGATMA1

Part NumberBSZ180P03NS3EGATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSZ180P03NS3E G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	2220pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN

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