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SI7119DN-T1-GE3

SI7119DN-T1-GE3

Part NumberSI7119DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 200V 3.8A 1212-8

DatasheetSI7119DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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SI7119DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7119DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.05Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	666pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

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