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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7606-55B
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
FET Feature -
Power Dissipation (Max) 254W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 60V 12A (Tc) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3,
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Nexperia USA Inc., N-Channel 100V 26A (Tc) 106W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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IRLI3705NPBF
Infineon Technologies, N-Channel 55V 52A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
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SIR140DP-T1-RE3
Vishay Siliconix, N-Channel 25V 71.9A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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