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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK768R3-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 43.1nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2920pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SQM10250E_GE3
Vishay Siliconix, N-Channel 250V 65A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®
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FDS2734
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CSD17505Q5A
Texas Instruments, N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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STWA57N65M5
STMicroelectronics, N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ V
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