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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9214-30A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2317pF @ 25V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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IRL40B209
Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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Diodes Incorporated, N-Channel 60V 10.6A (Ta), 31A (Tc) 1.16W (Ta) Surface Mount PowerDI5060-8,
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IPP80R600P7XKSA1
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Vishay Siliconix, N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack,
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Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 41.6W (Tc) Through Hole ITO-220,
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APT42F50B
Microsemi Corporation, N-Channel 500V 42A (Tc) 625W (Tc) Through Hole TO-247 [B], POWER MOS 8™
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STD8N60DM2
STMicroelectronics, N-Channel 600V 8A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ DM2
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