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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9608-55A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 6021pF @ 25V
FET Feature -
Power Dissipation (Max) 253W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Infineon Technologies, N-Channel 120V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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SI2302CDS-T1-GE3
Vishay Siliconix, N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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FCMT199N60
ON Semiconductor, N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88, SuperFET® II
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