C3M0120090D
C3M0120090D
Part Number C3M0120090D Description 900V, 120 MOHM, G3 SIC MOSFET Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3
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C3M0120090D - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet C3M0120090D Standard Package 30 Manufacturer Cree/Wolfspeed Series C3M™ Packaging Tube Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 15V Vgs (Max) +18V, -8V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V FET Feature - Power Dissipation (Max) 97W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3
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