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CSD16322Q5


CSD16322Q5

Part NumberCSD16322Q5

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

CSD16322Q5 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTexas Instruments
SeriesNexFET™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)3V, 8V
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 8V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.7nC @ 4.5V
Vgs (Max)+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds1365pF @ 12.5V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-VSON-CLIP (5x6)
Package / Case8-PowerTDFN

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