DMN30H4D0LFDE-7

Part NumberDMN30H4D0LFDE-7

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN30H4D0LFDE
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
Rds On (Max) @ Id, Vgs	4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	187.3pF @ 25V
FET Feature	-
Power Dissipation (Max)	630mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type E)
Package / Case	6-UDFN Exposed Pad

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