DN2530N3-G
DN2530N3-G
Part Number DN2530N3-G Description MOSFET N-CH 300V 0.175A TO92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 300V 175mA (Tj) 740mW (Ta) Through Hole TO-92 (TO-226)
To learn about the specification of DN2530N3-G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DN2530N3-G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of DN2530N3-G.
We are offering DN2530N3-G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
DN2530N3-G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DN2530 Standard Package 1000 Manufacturer Microchip Technology Series - Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 12Ohm @ 150mA, 0V Vgs(th) (Max) @ Id - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 740mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92 (TO-226) Package / Case TO-226-3, TO-92-3 (TO-226AA)
DN2530N3-G - Related ProductsMore >>
TN0620N3-G-P002 Microchip Technology, N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
IRLZ24NPBF Infineon Technologies, N-Channel 55V 18A (Tc) 45W (Tc) Through Hole TO-220AB, HEXFET®
View
TSM070NA04LCR RLG Taiwan Semiconductor Corporation, N-Channel 40V 91A (Tc) 113W (Tc) Surface Mount 8-PDFN (5x6),
View
IRLR2905TRPBF Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
STL18N65M2 STMicroelectronics, N-Channel 650V 8A (Tc) 57W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M2
View
PSMN014-80YLX Nexperia USA Inc., N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8,
View
SI2316DS-T1-E3 Vishay Siliconix, N-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
TK040N65Z,S1F Toshiba Semiconductor and Storage, N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247,
View
TSM088NA03CR RLG Taiwan Semiconductor Corporation, N-Channel 30V 61A (Tc) 56W (Tc) Surface Mount 8-PDFN (5x6),
View
IRLB4132PBF Infineon Technologies, N-Channel 30V 78A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®
View
SQJA72EP-T1_GE3 Vishay Siliconix, N-Channel 100V 37A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
STP65NF06 STMicroelectronics, N-Channel 60V 60A (Tc) 110W (Tc) Through Hole TO-220AB, STripFET™ II
View
DN2530N3-G - Tags
English
