Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR188DP-T1-RE3

SIR188DP-T1-RE3

SIR188DP-T1-RE3

Part NumberSIR188DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V

DatasheetSIR188DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 25.5A (Ta), 60A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR188DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR188DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR188DP-T1-RE3.
We are offering SIR188DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR188DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR188DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	25.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	3.85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 30V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR188DP-T1-RE3 - Related Products

	IPB123N10N3GATMA1	Infineon Technologies, N-Channel 100V 58A (Tc) 94W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	BSS123K-TP	Micro Commercial Co, N-Channel 100V 170mA 350mW Surface Mount SOT-23,	View
	SISA04DN-T1-GE3	Vishay Siliconix, N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SSM3K15AMFV,L3F	Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSIII	View
	FDC8886	ON Semiconductor, N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	DMN4008LFG-7	Diodes Incorporated, N-Channel 40V 14.4A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,	View
	FDD6635	ON Semiconductor, N-Channel 35V 15A (Ta), 59A (Tc) 3.8W (Ta), 55W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	SQM120N04-1M7L_GE3	Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO-263, TrenchFET®	View
	TSM120N06LCP ROG	Taiwan Semiconductor Corporation, N-Channel 60V 70A (Tc) 125W (Tc) Surface Mount TO-252, (D-Pak),	View
	IRF3710ZPBF	Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-220AB, HEXFET®	View
	STDV3055L104T4G	ON Semiconductor, N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK,	View
	SIE812DF-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®	View

SIR188DP-T1-RE3 - Tags

SIR188DP-T1-RE3 SIR188DP-T1-RE3 PDF SIR188DP-T1-RE3 datasheet SIR188DP-T1-RE3 specification SIR188DP-T1-RE3 image SIR188DP-T1-RE3 India Renesas Electronics India SIR188DP-T1-RE3 buy SIR188DP-T1-RE3 SIR188DP-T1-RE3 price SIR188DP-T1-RE3 distributor SIR188DP-T1-RE3 supplier SIR188DP-T1-RE3 wholesales