FCMT125N65S3


FCMT125N65S3

Part NumberFCMT125N65S3

Manufacturer

Description

Datasheet

Package / Case4-PowerTSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FCMT125N65S3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
SeriesSuperFET® III
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.5V @ 590µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1920pF @ 400V
FET Feature-
Power Dissipation (Max)181W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-PQFN (8x8)
Package / Case4-PowerTSFN

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