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FCMT199N60

FCMT199N60

Part NumberFCMT199N60

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 20.2A POWER88

DatasheetFCMT199N60

Package / Case4-PowerTSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88

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FCMT199N60 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FCMT199N60
Standard Package	1
Manufacturer	ON Semiconductor
Series	SuperFET® II
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 100V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Power88
Package / Case	4-PowerTSFN

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