FCMT199N60
FCMT199N60
Part Number FCMT199N60
Description MOSFET N-CH 600V 20.2A POWER88
Package / Case 4-PowerTSFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88
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FCMT199N60 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FCMT199N60
Standard Package 1
Manufacturer ON Semiconductor
Series SuperFET® II
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 100V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Power88
Package / Case 4-PowerTSFN
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