FCMT199N60
FCMT199N60
Part Number FCMT199N60 Description MOSFET N-CH 600V 20.2A POWER88 Package / Case 4-PowerTSFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88
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FCMT199N60 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FCMT199N60 Standard Package 1 Manufacturer ON Semiconductor Series SuperFET® II Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 199mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 100V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power88 Package / Case 4-PowerTSFN
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