FCP190N60E
FCP190N60E
Part Number FCP190N60E Description MOSFET N-CH 600V TO220-3 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
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FCP190N60E - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FCP(F)190N60E Standard Package 800 Manufacturer ON Semiconductor Series SuperFET® II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3175pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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