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FDI045N10A-F102

FDI045N10A-F102

Part NumberFDI045N10A-F102

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 120A I2PAK-3

DatasheetFDP045N10A, FDI045N10A

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 120A (Tc) 263W (Tc) Through Hole I2PAK (TO-262)

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FDI045N10A-F102 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDP045N10A, FDI045N10A
Standard Package	1000
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5270pF @ 50V
FET Feature	-
Power Dissipation (Max)	263W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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