FDS3572
FDS3572
Part Number FDS3572
Description MOSFET N-CH 80V 8.9A 8SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 80V 8.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
To learn about the specification of FDS3572, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDS3572 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDS3572.
We are offering FDS3572 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDS3572 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDS3572
Standard Package 2500
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
FQT13N06TF
ON Semiconductor, N-Channel 60V 2.8A (Tc) 2.1W (Tc) Surface Mount SOT-223-4, QFET®
View
STF11NM50N
STMicroelectronics, N-Channel 500V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ II
View
IRLHM630TRPBF
Infineon Technologies, N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3), HEXFET®
View
PSMN130-200D,118
Nexperia USA Inc., N-Channel 200V 20A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™
View
TK14E65W,S1X
Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220, DTMOSIV
View
R6030ENZ1C9
Rohm Semiconductor, N-Channel 600V 30A (Tc) 120W (Tc) Through Hole TO-247,
View
DMN2230UQ-7
Diodes Incorporated, N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23,
View
TK7E80W,S1X
Toshiba Semiconductor and Storage, N-Channel 800V 6.5A (Ta) 110W (Tc) Through Hole TO-220, DTMOSIV
View
SI7846DP-T1-E3
Vishay Siliconix, N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IPB036N12N3GATMA1
Infineon Technologies, N-Channel 120V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™
View
IRFS4010TRL7PP
Infineon Technologies, N-Channel 100V 190A (Tc) 380W (Tc) Surface Mount D2PAK, HEXFET®
View
IPB080N03LGATMA1
Infineon Technologies, N-Channel 30V 50A (Tc) 47W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
FDS3572 - Tags