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FQP13N10L

FQP13N10L

Part NumberFQP13N10L

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 12.8A TO-220

DatasheetFQP13N10L

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3

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FQP13N10L - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQP13N10L
Standard Package	1000
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 25V
FET Feature	-
Power Dissipation (Max)	65W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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