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FQT1N80TF-WS

FQT1N80TF-WS

Part NumberFQT1N80TF-WS

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 0.2A SOT-223

DatasheetFQT1N80TF_WS

Package / CaseTO-261-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3

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FQT1N80TF-WS - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQT1N80TF_WS
Standard Package	1
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	20Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.2nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-3
Package / Case	TO-261-3

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