HGT1S10N120BNST


HGT1S10N120BNST

Part NumberHGT1S10N120BNST

Manufacturer

Description

Datasheet

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HGT1S10N120BNST - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)35A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298W
Switching Energy320µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Base Part NumberHGT1S10N120

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