Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	HGT(G,P)10N120BN, HGT1S10N120BNS
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	35A
Current - Collector Pulsed (Icm)	80A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298W
Switching Energy	320µJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	100nC
Td (on/off) @ 25°C	23ns/165ns
Test Condition	960V, 10A, 10Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Base Part Number	HGT1S10N120

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STGW20H60DF	STMicroelectronics, IGBT Trench Field Stop 600V 40A 167W Through Hole TO-247,	View
STGB7NC60HDT4	STMicroelectronics, IGBT 600V 25A 80W Surface Mount D2PAK, PowerMESH™	View
IHW20N120R5XKSA1	Infineon Technologies, IGBT 1200V 40A 288W Through Hole PG-TO247-3, TrenchStop®	View
RGTH00TS65GC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N,	View
STGP40V60F	STMicroelectronics, IGBT Trench Field Stop 600V 80A 283W Through Hole TO-220,	View
STGD3NB60SDT4	STMicroelectronics, IGBT 600V 6A 48W Surface Mount DPAK, PowerMESH™	View
IRG4PC50WPBF	Infineon Technologies, IGBT 600V 55A 200W Through Hole TO-247AC,	View

HGT1S10N120BNST

Part NumberHGT1S10N120BNST