Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	HGT(G,P)10N120BN, HGT1S10N120BNS
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	35A
Current - Collector Pulsed (Icm)	80A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298W
Switching Energy	320µJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	100nC
Td (on/off) @ 25°C	23ns/165ns
Test Condition	960V, 10A, 10Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Base Part Number	HGT1S10N120

IRG4PSH71UDPBF	Infineon Technologies, IGBT 1200V 99A 350W Through Hole SUPER-247™ (TO-274AA),	View
RGCL80TS60GC11	Rohm Semiconductor, IGBT Trench Field Stop 600V 65A 148W Through Hole TO-247N,	View
RGT8NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S),	View
IXGH30N120B3D1	IXYS, IGBT PT 1200V 300W Through Hole TO-247AD (IXGH), GenX3™	View
STGWA50M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247 Long Leads,	View
IKW50N65F5FKSA1	Infineon Technologies, IGBT 650V 80A 305W Through Hole PG-TO247-3, TrenchStop®	View
RGTH80TK65GC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 31A 66W Through Hole TO-3PFM,	View
IXXK200N65B4	IXYS, IGBT PT 650V 370A 1150W Through Hole TO-264 (IXXK), GenX4™, XPT™	View
FGB40T65SPD-F085	ON Semiconductor, IGBT Trench Field Stop 650V 80A 267W Surface Mount TO-263AB (D²PAK),	View
NGTB30N120FL2WG	ON Semiconductor, IGBT Trench Field Stop 1200V 60A 452W Through Hole TO-247,	View
STGP7NC60HD	STMicroelectronics, IGBT 600V 25A 80W Through Hole TO-220AB, PowerMESH™	View
STGD10NC60KDT4	STMicroelectronics, IGBT 600V 20A 62W Surface Mount DPAK, PowerMESH™	View

HGT1S10N120BNST

Part NumberHGT1S10N120BNST