Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	HGTD1N120BNS, HGTP1N120BN
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	5.3A
Current - Collector Pulsed (Icm)	6A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 1A
Power - Max	60W
Switching Energy	70µJ (on), 90µJ (off)
Input Type	Standard
Gate Charge	14nC
Td (on/off) @ 25°C	15ns/67ns
Test Condition	960V, 1A, 82Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252AA
Base Part Number	HGTD1N120

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IXGT32N120A3	IXYS, IGBT PT 1200V 75A 300W Surface Mount TO-268, GenX3™	View
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IRGP20B60PDPBF	Infineon Technologies, IGBT NPT 600V 40A 220W Through Hole TO-247AC,	View
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RGT00TS65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N,	View
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APT65GP60B2G	Microsemi Corporation, IGBT PT 600V 100A 833W Through Hole, POWER MOS 7®	View

HGTD1N120BNS9A

Part NumberHGTD1N120BNS9A