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HP8S36TB


HP8S36TB

Part NumberHP8S36TB

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HP8S36TB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C27A, 80A
Rds On (Max) @ Id, Vgs2.4mOhm @ 32A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds6100pF @ 15V
Power - Max29W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device Package8-HSOP

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