IPB029N06N3GATMA1
IPB029N06N3GATMA1
Part Number IPB029N06N3GATMA1 Description MOSFET N-CH 60V 120A TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263AB)
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IPB029N06N3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx029N06N3 G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 118µA Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V FET Feature - Power Dissipation (Max) 188W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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