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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB108N15N3 G,IPx111N15N3 G
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 83A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4410ZTRLPBF
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R6006ANX
Rohm Semiconductor, N-Channel 600V 6A (Tc) 40W (Tc) Through Hole TO-220FM,
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STD4NK80Z-1
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DMT10H010LCT
Diodes Incorporated, N-Channel 100V 98A (Tc) 2W (Ta), 139W (Tc) Through Hole TO-220AB,
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FQB50N06LTM
ON Semiconductor, N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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NX7002BKSX
Nexperia USA Inc., N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount 6-TSSOP,
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IPB034N03LGATMA1
Infineon Technologies, N-Channel 30V 80A (Tc) 94W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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NVTFS4C06NWFTAG
ON Semiconductor, N-Channel 30V 21A (Ta) 3.1W (Ta), 37W (Tc) Surface Mount 8-WDFN (3.3x3.3),
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TPN13008NH,L1Q
Toshiba Semiconductor and Storage, N-Channel 80V 18A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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PSMN1R8-30BL,118
Nexperia USA Inc., N-Channel 30V 100A (Tc) 270W (Tc) Surface Mount D2PAK,
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IRLR8726TRPBF
Infineon Technologies, N-Channel 30V 86A (Tc) 75W (Tc) Surface Mount D-Pak, HEXFET®
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