IPD60R3K3C6ATMA1
IPD60R3K3C6ATMA1
Part Number IPD60R3K3C6ATMA1 Description MOSFET N-CH 600V 1.7A TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD60R3K3C6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60R3K3C6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60R3K3C6ATMA1.
We are offering IPD60R3K3C6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD60R3K3C6ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD60R3K3C6 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ C6 Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 93pF @ 100V FET Feature - Power Dissipation (Max) 18.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R3K3C6ATMA1 - Related ProductsMore >>
DMN25D0UFA-7B Diodes Incorporated, N-Channel 25V 240mA (Ta) 280mW (Ta) Surface Mount X2-DFN0806-3,
View
TK3R1P04PL,RQ Toshiba Semiconductor and Storage, N-Channel 40V 58A (Tc) 87W (Tc) Surface Mount DPAK, U-MOSIX-H
View
RJK03M5DNS-00#J5 Renesas Electronics America, N-Channel 30V 25A (Ta) 15W (Tc) Surface Mount 8-HWSON (3.3x3.3),
View
CSD16407Q5 Texas Instruments, N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
IRFIZ24NPBF Infineon Technologies, N-Channel 55V 14A (Tc) 29W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
View
IXFN55N50 IXYS, N-Channel 500V 55A (Tc) 625W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
VN3205N8-G Microchip Technology, N-Channel 50V 1.5A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
STQ2HNK60ZR-AP STMicroelectronics, N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™
View
SQP120N10-3M8_GE3 Vishay Siliconix, N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO-220AB,
View
TSM1N80CW RPG Taiwan Semiconductor Corporation, N-Channel 800V 300mA (Ta) 2.1W (Tc) Surface Mount SOT-223,
View
DMN26D0UFB4-7 Diodes Incorporated, N-Channel 20V 230mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3,
View
FDS86140 ON Semiconductor, N-Channel 100V 11.2A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC, PowerTrench®
View
IPD60R3K3C6ATMA1 - Tags
English
